4H-N Type SiC Substrate 10×10mm Small Wafer Customizable Shape & Dimensions
The SiC 10×10 small wafer is a high-performance semiconductor product developed based on third-generation semiconductor material silicon carbide (SiC). Manufactured using Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD) processes, it offers two polytype options: 4H-SiC or 6H-SiC. With dimensional tolerance controlled within ±0.05mm and surface roughness Ra < 0.5nm, the product is available in both N-type and P-type doped versions, covering a resistivity range of 0.01-100Ω·cm. Each wafer undergoes rigorous quality inspections, including X-ray diffraction (XRD) for lattice integrity testing and optical microscopy for surface defect detection, ensuring compliance with semiconductor-grade quality standards.
SiC Substrate 10×10mm Technical Specification
| Parameter Category | Specification Details |
| Material Type | 4H-SiC (N-type doped) |
| Standard Dimensions | 10×10 mm (±0.05mm tolerance) |
| Thickness Options | 100-500 μm |
| Surface Characteristics | Ra < 0.5 nm (polished)
Epitaxial-ready surface |
| Electrical Properties | Resistivity: 0.01-0.1 Ω·cm
Carrier Concentration: 1×10¹⁸-5×10¹⁹ cm⁻³ |
| Crystal Orientation | (0001) ±0.5° (standard) |
| Thermal Conductivity | 490 W/m·K (typical) |
| Defect Density | Micropipe Density: <1 cm⁻²
Dislocation Density: <10⁴ cm⁻² |
| Customization Options | - Non-standard shapes (round, rectangular, etc.)
- Special doping profiles
- Backside metallization |
SiC Substrate 10×10mm Key Technical Features
- Exceptional Thermal Management: SiC Substrate 10×10mm thermal conductivity up to 490 W/m·K, three times higher than silicon, significantly reducing device operating temperature and improving system reliability.
- Superior Electrical Properties: SiC Substrate 10×10mm breakdown field strength of 2-4 MV/cm, ten times that of silicon, supporting higher voltage operation; electron saturation drift velocity reaches 2×10^7 cm/s, making it ideal for high-frequency applications.
- Extreme Environmental Adaptability: SiC Substrate 10×10mm maintains stable performance at temperatures up to 600°C, with a low thermal expansion coefficient of 4.0×10^-6/K, ensuring dimensional stability under high-temperature conditions.
- Outstanding Mechanical Performance: Vickers hardness of 28-32GPa, flexural strength exceeding 400MPa, and exceptional wear resistance, SiC Substrate 10×10mm offering a service life 5-10 times longer than conventional materials.
- Customization Services: SiC Substrate 10×10mm tailored solutions available for crystal orientation (e.g., 0001, 11-20), thickness (100-500μm), and doping concentration (10^15-10^19 cm^-3) based on customer requirements.
SiC Substrate 10×10mm Core Application Areas
1. New Energy Vehicle Powertrains: SiC substrate 10×10mm is used in automotive-grade SiC MOSFETs and diodes, improving inverter efficiency by 3-5% and extending EV driving range.
2. 5G Communication Infrastructure: SiC substrate 10×10mm serves as a substrate for RF power amplifiers (RF PA), supporting millimeter-wave band (24-39GHz) applications and reducing base station power consumption by over 20%.
3. Smart Grid Equipment: SiC substrate 10×10mm applied in high-voltage direct current (HVDC) systems for solid-state transformers and circuit breakers, enhancing power transmission efficiency.
4. Industrial Automation: SiC substrate 10×10mm enables high-power industrial motor drives with switching frequencies exceeding 100kHz, reducing device size by 50%.
5. Aerospace Electronics: SiC substrate 10×10mm meets reliability requirements for satellite power systems and aircraft engine control systems in extreme environments.
6. High-End Optoelectronic Devices: SiC substrate 10×10mm ideal substrate material for UV LEDs, laser diodes, and other optoelectronic components.
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2. 10 Mm X 10 Mm 6H Semi-Insulating Type SiC Substrate Research Grade SiC Crystal Substrate
SiC Substrate 10×10mm FAQ
1. Q: What are the main applications of 10×10 mm SiC wafers?
A: 10×10 mm SiC wafers are primarily used for prototyping power electronics (MOSFETs/diodes), RF devices, and optoelectronic components due to their high thermal conductivity and voltage tolerance.
2. Q: How does SiC compare to silicon for high-power applications?
A: SiC offers 10x higher breakdown voltage and 3x better thermal conductivity than silicon, enabling smaller, more efficient high-temperature/high-frequency devices.
Tags: #10×10mm, #Silicon Carbide Substrate, #Diameter 200mm, #Thickness 500μm, #4H-N Type, #MOS Grade, #Prime Grade, #Large Diameter, #Small Wafer, #Customizable Shape & Dimensions
